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ACR3200VR33

Bypass Thyristor 3300V/3200A for the protection of IGBT modules in VSC multi-level applications

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ACR3200VR33 Dynex Semiconductor
ACR3200VR33 Dynex Semiconductor
kos
ID Code:183764
Proizvajalec:Dynex Semiconductor
Cena z DDV : 921,1886 €
Cena brez DDV : 761,3129 €
VAT:21 %
Razpoložljivost:na zahtevo
Skupne zaloge:0 kos
Označevanje proizvajalec: ACR3200VR33
Centralno skladišče Zdice: 0 kos
Zunanji pomnilnik (dobavni rok od 5÷10 dni): 0 kos
Enota:: kos
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KoličinaCena brez DDVCena z DDV
1 + 761,3129 €921,1886 €
6 + 742,2801 €898,1589 €
The Dynex Bypass Thyristor range of devices is specially designed for the protection of IGBT modules in Voltage Source Converter multi-level applications, where a reduced forward blocking voltage is required. Very Low Cosmic Ray FIT Rating, High Surge Capability, High dv/dt Rating
The primary characteristic of the bypass thyristor which determines current diversion from the IGBT diode is dynamic on-state voltage, with overall turn-on time a secondary influence. Highly optimised, Low FIT, low Vt, 3.3kV and 4.5kV bypass thyristor devices have been produced for VSC protection.
Voltage Source Converter (VSC) technology provides a number of advantages over traditional (LCC) HVDC including self-commutation, small footprint, and black start capability and is becoming increasingly popular in applications such as offshore wind.With higher voltage systems, where the current handling capability of the IGBT diode is reduced, effective current diversion becomes essential.

Osnovni podatki:

Označevanje proizvajalecACR3200VR33 
Type of casing:!_puk_! 
Zadeva:!_puk110/73x27t_! 
KategorieTrisil-Overvoltage Protection 
Vrsta komponente:TRISIL 
Konfiguracija:1xTiristor 
RoHSDa 
REACHNe 
NOVINKA

Električni parametri:

Udc (URRM, UCEO, Umax) 3300 [V]
Idc max (Tc/Ta=25÷160°C)3200 [A]
Idc max (Tc/Ta=60÷69°C)3200 [A]
du/dt (critical rate of rise of on-state voltage)10000 [V/µs]
di/dt (critical rate of rise of on-state current)400 [A/µs]
I2t (TC/TA=25°C)9240 [1000*A2s]
tf (turn-off=fall time)3000 [ns]

Materiala, barvi, design:

Vrsta materiala:!_si-silicon_! 

Toplotno in mehansko parametri:

Tmin (najnižja delovna temperatura)-40 [°C]
Tmax (najvišja delovna temperatura)125 [°C]
Rthjc (case)0.00746 [°C/W]
Fmin:48000 [N]
Fmax:59000 [N]

Dimenzije:

PIN dimenzije0.00 [mm]

Embalaža in teža:

Enota:kos 
Teža:1100 [g]
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