MOSFET 1700V Full SiC Very Low Stray Inductance Phase Leg SiCThe following are the features of MSCSM170AM058CD3AG device:
. SiC power MOSFET
. Low RDS(on)
. High temperature performance
. SiC Schottky diode
. Zero reverse recovery
. Zero forward recovery
. Temperature independent switching behavior
. Positive temperature coefficient on VF
. Very low stray inductance
. Internal thermistor for temperature monitoring
. M4 and M5 power connectors
. M2.5 signals connectors
. AlN substrate for improved thermal performance
Osnovni podatki:
Označevanje proizvajalec | MSCSM170AM058CD3AG |
Kategorie | Full SiC (MOS-BD+D) |
Vrsta komponente: | SiC MOSFET-BD+SiC Schottky D |
Konfiguracija: | Half Bridge 1*(Phase Leg) |
Specifikacija: | !_sic n-channel mosfet_! |
Konstrukcija: | 2*FET-BD+2*D |
Vrsta materiala: | !_sic full_! |
RoHS | Da |
REACH | Ne |
Type of casing: | MODUL |
Zadeva: | !_d3_! |
NOVINKA | A |
RoHS1 | Ano |
UL94 | V-0 |
Embalaža in teža:
Enota: | kos |
Teža: | 380 [g] |
Tip embalaže: | BOX |
Majhen paket (število enot): | 1 |
Elektrofizični parametri:
Udc (URRM, UCEO, Umax) | 1700 [V] |
Idc max (Tc/Ta=25÷160°C) | 348 [A] |
Idc max (Tc/Ta=25°C) | 348 [A] |
Idc max (Tc/Ta=80÷89°C) | 277 [A] |
Uisol (@25°C/1min/50Hz) | 4000 [V] |
UF (maximum forward voltage) | 1.8 [VDC] |
IR (reverse current) | 1200 [µA] |
Pd -s chladičem (Tc=25°C) | 1641 [W] |
Input Logic Level (Ugs level) | 20V |
Rds(on) 10V (Ugs=10V) | 7.5 [mΩ] |
tf (turn-off=fall time) | 30 [ns] |
Qg (Total Gate Charge) | 1068 [nC] |
Cin/CL Load Capacitance | 19800 pF |
Toplotno in mehansko parametri:
Tmin (najnižja delovna temperatura) | -40 [°C] |
Tmax (najvišja delovna temperatura) | 175 [°C] |
Rthjc (case) | 0.075 [°C/W] |
Rthjc1 IGBT | 0.091 [°C/W] |
Rthjc2 Dioda, Tyristor | 0.101 [°C/W] |
W - Širina | 62 [mm] |
L - Dolžina | 108 [mm] |
H - Višina | 31 [mm] |
Rozměry/Velikost (LxWxH) | 108x62x31 [mm] |
Alternative in zamenjave
Alternativa 1: | 177329 - CAS300M17BM2 (WOL) |
Alternativa 2: | 186080 - SKM260MB170SCH17 (SMK) |