IGBT 650V Half-Bridge • High speed IGBT 5 up 100kHz
Osnovni podatki:
Označevanje proizvajalec | APTGTQ200A65T3G |
Kategorie | IGBT Full Silicon |
Konfiguracija: | Half Bridge 1*(Phase Leg) |
Vrsta materiala: | !_si-silicon_! |
RoHS | Da |
REACH | Ne |
Type of casing: | MODUL |
Zadeva: | !_sp3f_! |
NOVINKA | A |
RoHS1 | Ano |
Embalaža in teža:
Enota: | kos |
Teža: | 125 [g] |
Tip embalaže: | BOX |
Majhen paket (število enot): | 10 |
Elektrofizični parametri:
Udc (URRM, UCEO, Umax) | 650 [V] |
Idc max (Tc/Ta=25÷160°C) | 200 [A] |
Idc max (Tc/Ta=25°C) | 200 [A] |
Idc max (Tc/Ta=80÷89°C) | 120 [A] |
Uisol (@25°C/1min/50Hz) | 4000 [V] |
UF (maximum forward voltage) | 2.2 [VDC] |
UCE (sat) (@25°C) | 2.2 [V] |
Pd -s chladičem (Tc=25°C) | 483 [W] |
Input Logic Level (Ugs level) | 20V |
trr recovery time (If=Inom.,@25°C) | 46 [ns] |
tr (Turn-on / rise time) | 15 [ns] |
tf (turn-off=fall time) | 18 [ns] |
Qg (Total Gate Charge) | 480 [nC] |
Cin/CL Load Capacitance | 12000 pF |
Toplotno in mehansko parametri:
Tmin (najnižja delovna temperatura) | -40 [°C] |
Tmax (najvišja delovna temperatura) | 175 [°C] |
Rthjc1 IGBT | 0.31 [°C/W] |
Rthjc2 Dioda, Tyristor | 0.35 [°C/W] |
RM - Pitch pins | 3.81 [mm] |
RM1 - Razmik vrstic | 38 [mm] |
W - Širina | 42.5 [mm] |
L - Dolžina | 73.4 [mm] |
H - Višina | 12 [mm] |
Rozměry/Velikost (LxWxH) | 73x43x12 [mm] |
PIN dimenzije | 1,35 [mm] |
Lv - Length of outlets | 5.3 [mm] |