IGBT 1200V - Half Bridge, Trench + Field Stop IGBT 4 Technology
Osnovni podatki:
Označevanje proizvajalec | APTGL475A120D3G |
Type of casing: | MODUL |
Zadeva: | SEMITRANS-3 |
Kategorie | IGBT Full Silicon |
Konfiguracija: | !_half bridge_! |
Vrsta materiala: | !_si-silicon_! |
RoHS | Da |
REACH | Ne |
NOVINKA | N |
RoHS1 | Ano |
Embalaža in teža:
Enota: | kos |
Teža: | 300 [g] |
Tip embalaže: | BOX |
Majhen paket (število enot): | 3 |
Elektrofizični parametri:
Udc (URRM, UCEO, Umax) | 1200 [V] |
Idc max (Tc/Ta=25÷160°C) | 610 [A] |
Idc max (Tc/Ta=25°C) | 610 [A] |
Idc max (Tc/Ta=80÷89°C) | 475 [A] |
Uisol (@25°C/1min/50Hz) | 4000 [V] |
UF (maximum forward voltage) | 1.7 [VDC] |
UCE (sat) (@25°C) | 1.8 [V] |
Pd -s chladičem (Tc=25°C) | 2080 [W] |
Input Logic Level (Ugs level) | 20V |
trr recovery time (If=Inom.,@25°C) | 155 [ns] |
tr (Turn-on / rise time) | 40 [ns] |
tf (turn-off=fall time) | 70 [ns] |
Ft (transition/operation frequency) (@Inom.) | 0.03 [MHz] |
Qg (Total Gate Charge) | 2300 [nC] |
Cin/CL Load Capacitance | 24600 pF |
Toplotno in mehansko parametri:
Tmin (najnižja delovna temperatura) | -40 [°C] |
Tmax (najvišja delovna temperatura) | 175 [°C] |
Rthjc1 IGBT | 0.072 [°C/W] |
Rthjc2 Dioda, Tyristor | 0.14 [°C/W] |
PIN dimenzije | 0.00 [mm] |